Level: Electronic 4.8N
PURITY/%: ≥99.998%
Packing: 44L/50L/880L
Enterprise number: LC054
Weight: 25Kg/500Kg
Pressure: 4.2 Mpa (20℃)
Valve: CGA330- 316LDiaphragm Valve
Application
Gas phase polishing of monocrystalline silicon sheet, corrosion of epitaxial base, surface treatment of metal, production of cemented carbide.
Impurity 1*10-6(v/v)
Metal ions 1*10-6(v/v) |
Composition |
Product specification | Actual detected value |
Inspection Equipment |
Limit | ||
Min | Average | Max | |||||
Nitrogen | ≦ 2.00 | 0.80 | 1.00 | 1.20 | DID Ion Chromatograph | 0.001 | |
Oxygen + Argon | ≦ 1.00 | < 0.05 | < 0.05 | < 0.05 | DID Ion Chromatograph | 0.001 | |
Methane+Acetylene | ≦ 2.00 | 0.90 | 1.00 | 1.20 | DID Ion Chromatograph | 0.1 | |
Carbon monoxide | ≦ 2.00 | < 0.10 | < 0.10 | < 0.10 | DID Ion Chromatograph | 0.002 | |
Carbon dioxide | ≦ 2.00 | < 1.0 | < 1.20 | < 2.0 | DID Ion Chromatograph | 0.002 | |
Water | ≦ 2.00 | 1.00 | 1.20 | 1.40 | Photoelectric Dew Point Meter | 0.1 | |
Iron | ≦ 0.50 | 0.10 | 0.20 | 0.40 | Plasma emission spectroscopy | 0.01 | |
Nickel | ≦ 0.10 | < 0.05 | < 0.05 | < 0.05 | Plasma emission spectroscopy | 0.01 | |
Copper | ≦ 0.10 | < 0.05 | < 0.05 | < 0.05 | Plasma emission spectroscopy | 0.01 | |
Cobalt | ≦ 0.10 | < 0.05 | < 0.05 | < 0.05 | Plasma emission spectroscopy | 0.01 | |
Manganese | ≦ 0.10 | < 0.05 | < 0.05 | < 0.05 | Plasma emission spectroscopy | 0.01 | |
Chromium | ≦ 0.10 | < 0.05 | < 0.05 | < 0.05 | Plasma emission spectroscopy | 0.01 | |
Dew point/℃ |
< -72 |
-76 |
-75 |
-74 |
Photoelectric Dew Point Meter |
-84 |